Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure
YANG Shuang, DING Kun, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, NIU Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan**
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：Band structure of wurtzite (WZ) GaAs nanowires (NWs) is investigated by using photoluminescence measurements under hydrostatic pressure at 6 K. We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV, corresponding to the optical transition between conduction band Γ 7C and valence band Γ 9V in WZ GaAs. The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.
收稿日期: 2015-02-27
出版日期: 2015-07-30
:
78.55.Cr
(III-V semiconductors)
73.21.Hb
(Quantum wires)
07.35.+k
(High-pressure apparatus; shock tubes; diamond anvil cells)
引用本文:
. [J]. 中国物理快报, 2015, 32(07): 77803-077803.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/7/077803
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I07/77803
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2015, Vol. 32 
