Spin Noise Spectroscopy in N-GaAs: Spin Relaxation of Localized Electrons
Jian Ma1,2 , Ping Shi1,2 , Xuan Qian1 , Ya-Xuan Shang1,2 , Yang Ji1,2**
1 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
Abstract ：Spin noise spectroscopy (SNS) of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the donor band. The spin relaxation time of electrons, which is retrieved from the SNS measurement, depends on the probe light energy and temperature, and it can be ascribed to the variation of electron localization degree.
收稿日期: 2017-04-06
出版日期: 2017-06-23
[1] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S V, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science 294 1488 [2] Žutić I, Fabian J and Das Sarma S 2004 Rev. Mod. Phys. 76 323 [3] Dyakonov M I 2008 Spin Physics in Semiconductors (Berlin: Springer-Verlag) 157 115 [4] Römer M, Hbner J and Oestreich M 2007 Rev. Sci. Instrum. 78 103903 [5] Müller G M, Oestreich M, Römer M and Hübner J 2010 Physica E 43 569 [6] Crooker S A, Rickel D G, Balatsky A V and Smith D L 2004 Nature 431 49 [7] Oestreich M, Römer M, Haug R J and Hägele D 2005 Phys. Rev. Lett. 95 216603 [8] Lucivero V G, Jiménez-Martínez R, Kong J and Mitchell M W 2016 Phys. Rev. A 93 053802 [9] Yang L Y, Glasenapp P, Greilich A, Reuter D, Wieck A D, Yakovlev D R, Bayer M and Crooker S A 2014 Nat. Commun. 5 4949 [10] Roy D, Yang L Y, Crooker S A and Sinitsyn N A 2015 Sci. Rep. 5 9573 [11] Li F X, Avadh S, Darryl S and Sinitsyn N A 2013 New J. Phys. 15 113038 [12] Li F X and Sinitsyn N A 2016 Phys. Rev. Lett. 116 026601 [13] Li F X, Crooker S A and Sinitsyn N A 2016 Phys. Rev. A 93 033814 [14] Tse W K, Saxena A, Smith D L and Sinitsyn N A 2014 Phys. Rev. Lett. 113 046602 [15] Berski F, Hübner J, Oestreich M, Ludwig A, Wieck A D and Glazov M 2015 Phys. Rev. Lett. 115 176601 [16] Pöschko M T, Rodin V V, Schlagnitweit J, Müller N and Desvaux H 2017 Nat. Commun. 8 13914 [17] Crooker S A, Cheng L and Smith D L 2009 Phys. Rev. B 79 035208 [18] Ma J, Shi P, Qian X, Li W and Ji Y 2016 Chin. Phys. B 25 117203 [19] Shi P, Ma J, Qian X, Li W and Ji Y 2017 Acta Phys. Sin. 66 17201 (in Chinese) [20] Kikkawa J M and Awschalom D D 1998 Phys. Rev. Lett. 80 4313 [21] Ka S 2009 Chin. Phys. Lett. 26 067201 [22] Hohage P E, Bacher G, Reuter D and Wieck A D 2006 Appl. Phys. Lett. 89 231101 [23] Liu E K, Zhu B S and Luo J S 2010 Semiconductor Physics (Beijing: National Defense Industry Press) chap 3 p 68 [24] Dzhioev R I, Zakharchenya B P, Korenev V L, Gammon D and Katzer S 2001 J. Exp. Theor. Phys. Lett. 74 182 [25] Jiang J H and Wu M W 2009 Phys. Rev. B 79 125206
[1]
.
[2]
.
[3]
.
[4]
.
[5]
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2017, Vol. 34 
