Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates
PAN Hong-Liang1, JIN Zhi1**, MA Peng1, GUO Jian-Nan1, LIU Xin-Yu1, YE Tian-Chun1, LI Jia2, DUN Shao-Bo2, FENG Zhi-Hong2
1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2Science and Technology on ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051
Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates
PAN Hong-Liang1, JIN Zhi1**, MA Peng1, GUO Jian-Nan1, LIU Xin-Yu1, YE Tian-Chun1, LI Jia2, DUN Shao-Bo2, FENG Zhi-Hong2
1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2Science and Technology on ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051
摘要Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top−gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 µm , are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits.
Abstract：Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top−gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 µm , are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits.
PAN Hong-Liang;JIN Zhi**;MA Peng;GUO Jian-Nan;LIU Xin-Yu;YE Tian-Chun;LI Jia;DUN Shao-Bo;FENG Zhi-Hong
. Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates[J]. 中国物理快报, 2011, 28(12): 127202-127202.
PAN Hong-Liang, JIN Zhi**, MA Peng, GUO Jian-Nan, LIU Xin-Yu, YE Tian-Chun, LI Jia, DUN Shao-Bo, FENG Zhi-Hong
. Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates. Chin. Phys. Lett., 2011, 28(12): 127202-127202.
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2011, Vol. 28 
