1School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130 2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
Abstract：Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors (GFETs) fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density $I_{\rm DS}$, improved transconductance $g_{\rm m}$, reduced sheet resistance $R_{\rm on}$, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasi-free-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.
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2016, Vol. 33 
