Abstract：We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma (ICP). By fabricating a multilayer-graphene field-effect transistor on a Si/SiO$_{2}$ substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon. In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger's mechanism. In the high bias regime, the values of $\alpha$ increase dramatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron–hole pair production is calculated to be $5\times10^{4}$ V/m. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.
2017, Vol. 34 
