摘要The effect of annealing on the microstructure and electrical characteristics of poly (3-hexylthiophene) (P3HT) films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4−TCNQ) is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped films under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4−TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.
Abstract：The effect of annealing on the microstructure and electrical characteristics of poly (3-hexylthiophene) (P3HT) films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4−TCNQ) is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped films under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4−TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.
MA Liang. Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly (3-Hexylthiophene) Films[J]. 中国物理快报, 2010, 27(12): 128502-128502.
MA Liang. Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly (3-Hexylthiophene) Films. Chin. Phys. Lett., 2010, 27(12): 128502-128502.
[1] Bao Z, Lovinger A J and Dodabalapur A 1996 Appl. Phys. Lett. 69 3066
[2] Kline R J, McGehee M D, Kadnikova E N, Liu J, Fréche J M J and Toney M F 2005 Macromolecules 38 3312
[3] Wang G, Swenson J, Moses D and Heeger A J 2003 J. Appl. Phys. 93 6137
[4] Babel A and Jenekhe S 2003 J. Phys. Chem. B 107 1749
[5] Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Laugeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer Herwig P and Leeuw D M 1999 Nature 401 685
[6] Chang J F, Sun B Q, Breiby D W, Nielsen M M, Solling T I, Giles M, McCulloch I and Sirringhaus H 2004 Chem. Mater. 16 4772
[7] Yang H, Shin T J, Yang L, Cho K, Ryu C Y and Bao Z 2005 Adv. Func. Mater. 15 671
[8] Bao Z, Dodabalapur A and Lovinger A J 1996 Appl. Phys. Lett. 69 4108
[9] Sirringhaus H, Tessler N and Friend R H 1998 Science 280 1741
[10] Kline R J, McGehee M D, Kadnikova E N, Liu J and Fréche J M J 2003 Adv. Mater. 15 1519
[11] Zen A, Pflaum J, Hirschmann S, Zhuang W, Jaiser F, Asawapirom U, Rabe J P, Scherf U and Neher D 2004 Adv. Funct. Mater. 14 757
[12] Majewski L A, Kingsley J W, Balocco C and Song A M 2006 Appl. Phys. Lett. 88 222108
[13] Sohn Y and Stuckless J T 2007 Appl. Phys. Lett. 90 171901
[14] Yang H, Shin T J, Bao Z and Ryu C Y 2007 J. Polymer Sci. B: Polymer Phys. 45 1303
[15] Ma L, Lee W H, Park Y D, Kim J S, Lee H S and Cho K 2008 Appl. Phys. Lett. 92 063310
[16] Horowitz G and Delannoy P 1991 J. Appl. Phys 70 469
[17] Russell D M, Newsome C J, Li S P, Kugler T and Ishida M 2005 Appl. Phys. Lett. 87 222109
[18] Aziz E F, Vollmer A, Eisebitt S, Eberhardt W, Pingel P, Neher D and Koch N 2007 Adv. Mater. 19 3257
[19] Bryce M R and Murphy L C 1984 Nature 309 119
[20] Hotta S and Waragai K 1991 J. Mater. Chem. 1 835
[21] Blochwitz J, Pfeiffer M, Fritz T and Leo K 1998 Appl. Phys. Lett. 73 729
[22] Gao W Y and Kahn A 2001 Appl. Phys. Lett. 79 4040
[23] Abdou M S A, Lu X, Xie Z W, Orfino F, Deen M J and Holdcroft S 1995 Chem. Mater. 7 631
[24] Sekitani T, Iba S, Kato Y, Noguchi Y, Someya T and Sakurai T 2005 Appl. Phys. Lett. 87 073505
[25] Russell D M, Newsome C J, Li S P, Kugler T and Ishida M 2005 Appl. Phys. Lett. 87 222109
[26] Kambayashi T, Wada H, Goto M, Mori T, Park B, Takezoe H and Ishikawa K 2006 Org. Electron. 7 440
[27] Lim E, B Jung B J, Chikamatsu M, Azumi R, Yoshida Y, Yase K, Do L M and Shim H K 2007 J. Mater. Chem. 17 1416
2010, Vol. 27 
