Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric
MAO Wei, ZHANG Jin-Cheng, XUE Jun-Shuai, HAO Yao, MA Xiao-Hua, WANG Chong, LIU Hong-Xia, XU Sheng-Rui, YANG Lin-An, BI Zhi-Wei, LIANG Xiao-Zhen, ZHANG Jin-Feng, KUANG Xian-Wei
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric
MAO Wei, ZHANG Jin-Cheng, XUE Jun-Shuai, HAO Yao, MA Xiao-Hua, WANG Chong, LIU Hong-Xia, XU Sheng-Rui, YANG Lin-An, BI Zhi-Wei, LIANG Xiao-Zhen, ZHANG Jin-Feng, KUANG Xian-Wei
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
摘要Al0.85In0.15N/AlN/GaN metal−oxide-semiconductor high electron mobility transistors (MOS-HEMTs) employing a 3-nm ultra-thin atomic-layer deposited (ALD) Al2O3 gate dielectric layer are reported. Devices with 0.6 μm gate lengths exhibit an improved maximum drain current density of 1227 mA/mm at a gate bias of 3 V, a peak transconductance of 328 mS/mm, a cutoff frequency fT of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventional Al0.85In0.15N/AlN/GaN HEMT. Negligible C–V hysteresis, together with a smaller pinch−off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AlInN interface. It is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconductance of the MOS-HEMT is increased slightly. It is an exciting improvement in the transconductance performance.
Abstract：Al0.85In0.15N/AlN/GaN metal−oxide-semiconductor high electron mobility transistors (MOS-HEMTs) employing a 3-nm ultra-thin atomic-layer deposited (ALD) Al2O3 gate dielectric layer are reported. Devices with 0.6 μm gate lengths exhibit an improved maximum drain current density of 1227 mA/mm at a gate bias of 3 V, a peak transconductance of 328 mS/mm, a cutoff frequency fT of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventional Al0.85In0.15N/AlN/GaN HEMT. Negligible C–V hysteresis, together with a smaller pinch−off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AlInN interface. It is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconductance of the MOS-HEMT is increased slightly. It is an exciting improvement in the transconductance performance.
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2010, Vol. 27 
