2010, Vol. 27(12): 128501-128501    DOI: 10.1088/0256-307X/27/12/128501
	Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric
	MAO Wei, ZHANG Jin-Cheng, XUE Jun-Shuai, HAO Yao, MA Xiao-Hua, WANG Chong, LIU Hong-Xia, XU Sheng-Rui, YANG Lin-An, BI Zhi-Wei, LIANG Xiao-Zhen, ZHANG Jin-Feng, KUANG Xian-Wei
	Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
	收稿日期 2010-08-20  修回日期 1900-01-01
	Supporting info
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