KONG Ning1**, LIU Jun-Qi1, LI Lu1, LIU Feng-Qi1, WANG Li-Jun1, WANG Zhan-Guo1, LU Wei2
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
10.7μm InGaAs/InAlAs Quantum Cascade Detector
KONG Ning1**, LIU Jun-Qi1, LI Lu1, LIU Feng-Qi1, WANG Li-Jun1, WANG Zhan-Guo1, LU Wei2
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
摘要A 10.7 μm quantum cascade detector based on lattice matched InGaAs/InAlAs/InP is demonstrated and characterized in terms of responsivity, resistivity and detectivity. The device operates in the 8–14 μm atmospheric window up to 140 K and shows a peak reponsivity of 14.4 mA/W at 78 K. With a resistance−area product value of 159 Ωcm2, the Johnson noise limited detectivity DJ∗ is 2.8×109 Jones (cm⋅Hz1/2W−1) at 78 K.
Abstract：A 10.7 μm quantum cascade detector based on lattice matched InGaAs/InAlAs/InP is demonstrated and characterized in terms of responsivity, resistivity and detectivity. The device operates in the 8–14 μm atmospheric window up to 140 K and shows a peak reponsivity of 14.4 mA/W at 78 K. With a resistance−area product value of 159 Ωcm2, the Johnson noise limited detectivity DJ∗ is 2.8×109 Jones (cm⋅Hz1/2W−1) at 78 K.
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2010, Vol. 27 
