A New Method to Prepare Boron Nitride Thin Films
LIU Li-Hua1,2 , LI Ying-Ai1 , FENG Wei1 , LI Wei-Qing1 , ZHAO Chun-Hong1 , WANG Yu-Xin1 , ZHAO Yong-Nian1
1 National Key Laboratory of Superhard Materials, Jilin University, Changchun 130012
2 College of Physics, Jilin Normal University, Siping 136000
A New Method to Prepare Boron Nitride Thin Films
LIU Li-Hua1,2 ;LI Ying-Ai1 ;FENG Wei1 ;LI Wei-Qing1 ;ZHAO Chun-Hong1 ;WANG Yu-Xin1 ;ZHAO Yong-Nian1
1 National Key Laboratory of Superhard Materials, Jilin University, Changchun 130012
2 College of Physics, Jilin Normal University, Siping 136000
关键词 ：
68.55.Nq ,
81.15.Gh ,
52.80.Vp
Abstract ： We report a new method to prepare boron nitride (BN) thin films on Si (100) substrates in an Ar-N2 -BCl3 -H2 gas system by magnetron arc enhanced plasma chemical vapour deposition. Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize the films. The FTIR spectra show that the deposited boron nitride films experienced a transition from pure h-BN phase to a cubic-containing phase with the variation of arc current ranging from 10A to 18A. The BN film with 42% c-BN was obtained without substrate bias voltage. In the gas system of Ar--N2 -BCl2 -H2 , h-BN can be preferentially etched by chlorine. The chemical etching effect of chlorine allows the formation of c-BN without substrate bias voltage, which may develop a new perspective for the deposition of high quality c-BN film with low stress.
Key words ：
68.55.Nq
81.15.Gh
52.80.Vp
出版日期: 2005-05-01
:
68.55.Nq
(Composition and phase identification)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
52.80.Vp
(Discharge in vacuum)
引用本文:
LIU Li-Hua;LI Ying-Ai;FENG Wei;LI Wei-Qing;ZHAO Chun-Hong;WANG Yu-Xin;ZHAO Yong-Nian. A New Method to Prepare Boron Nitride Thin Films[J]. 中国物理快报, 2005, 22(5): 1205-1209.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I5/1205
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