Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure
WANG Cheng-Xin, GAO Chun-Xiao, LIU Hong-Wu, HAN Yong-Hao, LUO Ji-Feng, SHEN Cai-Xia
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure
WANG Cheng-Xin;GAO Chun-Xiao;LIU Hong-Wu;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
关键词 ：
73.40.Lq ,
73.40.Ei
Abstract ： Heterostructures of an n-type ZnO film/p-type diamond film on the {111} crystalline diamond substrate have been prepared for the first time. The electrodes of the n- and p-type semiconductors are experimentally verified to be ohmic. The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to +2 V. The turn-on voltage of the diode is 0.34 V and the highest current is about 5.0 mA as the forward voltage reaches 2 V. Moreover, the diode is optically transparent in the region of 500-700 nm wavelength.
Key words ：
73.40.Lq
73.40.Ei
出版日期: 2003-01-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
73.40.Ei
(Rectification)
引用本文:
WANG Cheng-Xin;GAO Chun-Xiao;LIU Hong-Wu;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia. Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure[J]. 中国物理快报, 2003, 20(1): 127-129.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I1/127
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