Multiple Non-exponential Decay of Photo-induced Excess Electrons in Heterostructures
HE Li-xiong
National Laboratory for Semiconductor Superlattices and Microstructures, Beijing 100083
and Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002
Multiple Non-exponential Decay of Photo-induced Excess Electrons in Heterostructures
HE Li-xiong
National Laboratory for Semiconductor Superlattices and Microstructures, Beijing 100083
and Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002
关键词 ：
72.40.+w ,
73.40.Lq
Abstract ： The derivative -dN(t)/dlgt of photo-induced excess electrons N(t) in GaAs-Al0.3 Ga0.7 As and In0.15 Ga0.85 As-Al0.2 Ga0.8 As heterostructures with respect to 1gt shows a spectrum with pronounced peak-structure. The apparent capture energies, the lifetime prefactors, the apparent lifetime distribution, and the derivative decay quantities of individual lifetimes were analyzed to distinguish capture mechanisms.
Key words ：
72.40.+w
73.40.Lq
出版日期: 1997-01-01
:
72.40.+w
(Photoconduction and photovoltaic effects)
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
HE Li-xiong. Multiple Non-exponential Decay of Photo-induced Excess Electrons in Heterostructures[J]. 中国物理快报, 1997, 14(1): 67-70.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I1/67
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1997, Vol. 14 
