Theoretical Study of Field Intensity of THz Radiation from GaAs Large-Aperture Photoconductive Antennas

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	SHI Wei
	HOU Lei

关键词 ： 84.40.-x, 42.65.Re, 72.40.+w

Abstract： We simulate the THz radiation’s time domain waveforms of both the near field and the far field of a GaAs large aperture photoconductive antenna based on the current surge model. Because the micro-kinetic factors, such as transient state changes of current carrier’s mobility and lifetime of current carriers, are taken into account in the calculation, we find out the influences of these factors on the THz radiation intensity by changing the above parameters. The results are of guiding significance to design of high-power photoconductive THz radiation antenna materials.

Key words： 84.40.-x 42.65.Re 72.40.+w

出版日期: 2006-10-01

:	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)
	42.65.Re	(Ultrafast processes; optical pulse generation and pulse compression)
	72.40.+w	(Photoconduction and photovoltaic effects)

引用本文:

SHI Wei; HOU Lei. Theoretical Study of Field Intensity of THz Radiation from GaAs Large-Aperture Photoconductive Antennas[J]. 中国物理快报, 2006, 23(10): 2867-2870.
SHI Wei, HOU Lei. Theoretical Study of Field Intensity of THz Radiation from GaAs Large-Aperture Photoconductive Antennas. Chin. Phys. Lett., 2006, 23(10): 2867-2870.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2006/V23/I10/2867