A New Type of Photoelectric Response in a Double Barrier Structure with a Wide Quantum Well
ZHOU Xia, ZHENG Hou-Zhi
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
A New Type of Photoelectric Response in a Double Barrier Structure with a Wide Quantum Well
ZHOU Xia; ZHENG Hou-Zhi
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
72.40.+w ,
78.67.-n ,
73.63.-b
Abstract ： We have calculated the photoelectric response in a specially designed double barrier structure. It has been verified that a transfer of the internal photovoltaic effect in the quantum well to the tunnelling transport through above-barrier quasibound states of the emitter barrier may give rise to a remarkable photocurrent.
Key words ：
72.40.+w
78.67.-n
73.63.-b
出版日期: 2005-05-01
:
72.40.+w
(Photoconduction and photovoltaic effects)
78.67.-n
(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
73.63.-b
(Electronic transport in nanoscale materials and structures)
引用本文:
ZHOU Xia; ZHENG Hou-Zhi. A New Type of Photoelectric Response in a Double Barrier Structure with a Wide Quantum Well[J]. 中国物理快报, 2005, 22(5): 1222-1224.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I5/1222
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