Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p--n eterojunctions
HUANG Yan-Hong1, JIN Kui-Juan1, ZHAO Kun1, Lü Hui-Bin1, HE Meng1, CHEN Zheng-Hao1, ZHOU Yue-Liang1, YANG Guo-Zhen1
, MA Xiu-Liang2
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016
Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p--n eterojunctions
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016
Abstract： Good rectifying current--voltage characteristics and nanosecond photoelectric effects are observed in the p--n heterojunctions of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit photovoltaic pulses when the La0.9Sr0.1MnO3/ film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p--n heterojunction.
2006, Vol. 23 
