Characteristics of THz Emission from GaAs Crystal Excited by 400nm and 800nm Optical Pulses
YANG Yu-Ping, XU Xin-Long, YAN Wei, WANG Li
Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
Characteristics of THz Emission from GaAs Crystal Excited by 400nm and 800nm Optical Pulses
YANG Yu-Ping;XU Xin-Long;YAN Wei;WANG Li
Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
Abstract： THz emission spectroscopy is used to study the generation mechanism dependent behaviour of terahertz (THz) electromagnetic waves from the GaAs crystal under excitation by 400nm and 800nm femtosecond (fs) pulses, respectively. The wavelength dependence of the emission spectrum under two types of THz generation mechanisms is analysed. Under the optical rectification mechanism, a slight enhancement of the spectral amplitude in the high-frequency regime is observed in a GaAs(110) crystal by the excitation of a 400-nm optical pulse compared with that of 800nm. Whereas an obvious red shift of the amplitude spectrum occurs in the GaAs(100) sample under the transient photoconduction mechanism. These phenomena are explained in detail by the duration of the optical pump pulse and the band structure of GaAs, respectively.
YANG Yu-Ping;XU Xin-Long;YAN Wei;WANG Li. Characteristics of THz Emission from GaAs Crystal Excited by 400nm and 800nm Optical Pulses[J]. 中国物理快报, 2005, 22(8): 2123-2126.
YANG Yu-Ping, XU Xin-Long, YAN Wei, WANG Li. Characteristics of THz Emission from GaAs Crystal Excited by 400nm and 800nm Optical Pulses. Chin. Phys. Lett., 2005, 22(8): 2123-2126.
2005, Vol. 22 
