Light Emitting Diode Based on Tb(AcAc)3 Phen
CHEN Li-chun1,2 , WANG Xiang-jun2 , ZHANG Ruo-hua3 , DENG Zhen-bo4 , YAO Jian-quan1 , Jennifer Carter5
1 Institute of Laser and Photonics, Tianjin University, Tianjin 300072
2 Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191
3 Departmetn of Chemistry, Nankai University, Tianjin 300071
4 Department of Physics, Fudan University, Shanghai 200433
5 Department of Foreign Studies, Tianjin Institute of Technology, Tianjin 300191
Light Emitting Diode Based on Tb(AcAc)3 Phen
CHEN Li-chun1,2 ;WANG Xiang-jun2 ;ZHANG Ruo-hua3 ;DENG Zhen-bo4 ;YAO Jian-quan1 ;Jennifer Carter5
1 Institute of Laser and Photonics, Tianjin University, Tianjin 300072
2 Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191
3 Departmetn of Chemistry, Nankai University, Tianjin 300071
4 Department of Physics, Fudan University, Shanghai 200433
5 Department of Foreign Studies, Tianjin Institute of Technology, Tianjin 300191
关键词 ：
78.60.Fi ,
78.66.Qn ,
73.61.Ph
Abstract ： A diode with Tb(AcAc)3 Phen as the emitting layer and PPV, Alq3 as the hole and electron transporting layers was demonstrated. The emission of the diode had the unique line spectrum of pure Tb3+ . The injected electron and hole recombination region was discussed.
Key words ：
78.60.Fi
78.66.Qn
73.61.Ph
出版日期: 1997-01-01
引用本文:
CHEN Li-chun;WANG Xiang-jun;ZHANG Ruo-hua;DENG Zhen-bo;YAO Jian-quan;Jennifer Carter. Light Emitting Diode Based on Tb(AcAc)3 Phen[J]. 中国物理快报, 1997, 14(1): 71-73.
3 Phen. Chin. Phys. Lett., 1997, 14(1): 71-73.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I1/71
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1997, Vol. 14 
