Photoconductive Properties of MEH-PPV/CuS-Nanoparticle Composites
JIN Hui, HOU Yan-Bing, TANG Ai-Wei, MENG Xian-Guo, TENG Feng
Key Lab of Materials for Information Storage and Display (Ministry of Railway), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
Photoconductive Properties of MEH-PPV/CuS-Nanoparticle Composites
JIN Hui;HOU Yan-Bing;TANG Ai-Wei;MENG Xian-Guo;TENG Feng
Key Lab of Materials for Information Storage and Display (Ministry of Railway), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
Abstract： Photoconductive properties of photodiodes based on composites of CuS nanoparticles and Poly[2-methoxy,5-(2’-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) are investigated. By comparing composite devices with different MEH-PPV:CuS weight ratios of 1:1 (D2-1), 1:1.25 (D2-2), 1:2.5 (D2-3) and 1:5 (D2-4), it is found that the device D2-3 exhibited the best performance: the short-circuit current density of 17μA/cm2 with the light intensity of 16.7 mW/cm2, the highest open-circuit voltage of 0.83V, and the photosensitivity of 132 at reverse bias of -1 V. The photosensitivity is improved by a factor of 5 compared with the undoped MEH-PPV device.
2006, Vol. 23 
