Nonlinear Electrical Behaviour of the TiO2 .Sb2 O3 System
WANG Jin-Feng, CHEN Hong-Cun, ZHANG Xing-Hua, ZHANG De-Jun, ZHONG Wei-Lie
Department of Physics, Shandong University, Jinan 250100
Nonlinear Electrical Behaviour of the TiO2 .Sb2 O3 System
WANG Jin-Feng;CHEN Hong-Cun;ZHANG Xing-Hua;ZHANG De-Jun;ZHONG Wei-Lie
Department of Physics, Shandong University, Jinan 250100
关键词 ：
73.40.Lq
Abstract ： The Sb2 O3 -doped TiO2 varistors were obtained by conventional ceramic processing. The 0.75 mol%Sb2 O3 .99.25mol%TiO2 varistor has a nonlinear coefficient α = 7 and a minimum breakdown electrical field of 6V/mm. The nonlinear electrical behaviour of TiO2 .Sb2 O3 ceramics was explained by the introduction of defects in the crystal lattice that are responsible for the formation of Schottky potential barriers at grain boundaries.
Key words ：
73.40.Lq
出版日期: 2000-07-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
WANG Jin-Feng;CHEN Hong-Cun;ZHANG Xing-Hua;ZHANG De-Jun;ZHONG Wei-Lie. Nonlinear Electrical Behaviour of the TiO2 .Sb2 O3 System[J]. 中国物理快报, 2000, 17(7): 530-531.
2 .Sb2 O3 System. Chin. Phys. Lett., 2000, 17(7): 530-531.
链接本文:
https://cpl.iphy.ac.cn/CN/
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https://cpl.iphy.ac.cn/CN/Y2000/V17/I7/530
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2000, Vol. 17 
