Electronic Transport in Nanostructures Consisting of Magnetic-Electric Barriers
LU Mao-Wang1 , ZHANG Li-De1 , YAN Xiao-Hong2
1 Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
2 Department of Physics, Xiangtan University, Xiangtan
411105
Electronic Transport in Nanostructures Consisting of Magnetic-Electric Barriers
LU Mao-Wang1 ;ZHANG Li-De1 ;YAN Xiao-Hong2
1 Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
2 Department of Physics, Xiangtan University, Xiangtan
411105
关键词 ：
73.40.Gk ,
72.10.-d ,
75.70.Cn
Abstract ： We present a theoretical investigation on the transport properties of the nanostructures consisting of magnetic-electric barriers produced by the deposition, on the top of a heterostructure, of metallic ferromagnetic stripe with an applied voltage. Both the transmission probability and the conductance are found to be greatly dependent upon the applied voltage. When a positive voltage is applied to the stripe, both the transmission probability and the conductance shift towards low-energy region and increase. Conversely, they move towards high-energy direction and reduce for an applied negative voltage.
Key words ：
73.40.Gk
72.10.-d
75.70.Cn
出版日期: 2003-01-01
:
73.40.Gk
(Tunneling)
72.10.-d
(Theory of electronic transport; scattering mechanisms)
75.70.Cn
(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
引用本文:
LU Mao-Wang;ZHANG Li-De;YAN Xiao-Hong. Electronic Transport in Nanostructures Consisting of Magnetic-Electric Barriers[J]. 中国物理快报, 2003, 20(1): 124-126.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I1/124
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