SiGe Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition
HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, JIANG Xiao-bo, WU Hui-zhen1 , ZHAO Bing-hui, WANG Lei, QUE Duan-lin
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
1 Department of Physics, Hangzhou University, Hangzhou 310028
SiGe Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition
HUANG Jing-yun;YE Zhi-zhen;LU Huan-ming;JIANG Xiao-bo;WU Hui-zhen1 ;ZHAO Bing-hui;WANG Lei;QUE Duan-lin
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
1 Department of Physics, Hangzhou University, Hangzhou 310028
关键词 ：
81.15.Gh ,
73.40.Lq ,
68.55.Jk
Abstract ： A SiGe/Si epilayer with a linear-step-graded buffer was grown by ultrahigh vacuum chemical vapor deposition technique at a relatively high growth temperature (780°C) and a relatively high growth rate. Almost linear Ge content variation was realized in the buffer layer due to the Ge segregation to the growing surface during epitaxial growth. Double crystal x-ray diffraction and Raman spectroscopy show that the upper layer is fully relaxed. However, the measured results show that the density of dislocation in the composition graded structure is much lower than that in single-step epilayer structures.
Key words ：
81.15.Gh
73.40.Lq
68.55.Jk
出版日期: 1998-09-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
68.55.Jk
引用本文:
HUANG Jing-yun;YE Zhi-zhen;LU Huan-ming;JIANG Xiao-bo;WU Hui-zhen;ZHAO Bing-hui;WANG Lei;QUE Duan-lin. SiGe Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition[J]. 中国物理快报, 1998, 15(9): 692-694.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I9/692
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1998, Vol. 15 
