Electrical Properties of ZnO/Si Heterostructure
LIU Ci-Hui1,2 , CHEN Yu-Lin3 , LIN Bi-Xia1,2 , ZHU Jun-Jie1 , FU Zhu-Xi1,2 , PENG Cong2 , YANG Zhen2
1 Structure Research Laboratory, Chinese Academy of Sciences
2 Department of Physics, University of Science and Technology of China, Hefei 230026 (mailing address)
3 Special Class for the Gifted Young, University of Science and Technology of China, Hefei 230026
Electrical Properties of ZnO/Si Heterostructure
LIU Ci-Hui1,2 ;CHEN Yu-Lin3 ;LIN Bi-Xia1,2 ;ZHU Jun-Jie1 ;FU Zhu-Xi1,2 ;PENG Cong2 ;YANG Zhen2
1 Structure Research Laboratory, Chinese Academy of Sciences
2 Department of Physics, University of Science and Technology of China, Hefei 230026 (mailing address)
3 Special Class for the Gifted Young, University of Science and Technology of China, Hefei 230026
关键词 ：
71.55.Gs ,
73.40.Lq
Abstract ： The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I-V, I-T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
Key words ：
71.55.Gs
73.40.Lq
出版日期: 2001-08-01
:
71.55.Gs
(II-VI semiconductors)
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
LIU Ci-Hui;CHEN Yu-Lin;LIN Bi-Xia;ZHU Jun-Jie;FU Zhu-Xi;PENG Cong;YANG Zhen. Electrical Properties of ZnO/Si Heterostructure[J]. 中国物理快报, 2001, 18(8): 1108-1110.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I8/1108
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