Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN
WANG Cheng-Xin, GAO Chun-Xiao, ZHANG Tie-Chen, LIU Hong-Wu, LI Xun, HAN Yong-Hao, LUO Ji-Feng, SHEN Cai-Xia
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN
WANG Cheng-Xin;GAO Chun-Xiao;ZHANG Tie-Chen;LIU Hong-Wu;LI Xun;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
关键词 ：
73.40.Lq ,
73.40.Ei
Abstract ： A Heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapor deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The I-V characteristics of the hetero-junction diode were measured and the result indicated that the rectification ratio reached 105 , and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.
Key words ：
73.40.Lq
73.40.Ei
出版日期: 2002-10-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
73.40.Ei
(Rectification)
引用本文:
WANG Cheng-Xin;GAO Chun-Xiao;ZHANG Tie-Chen;LIU Hong-Wu;LI Xun;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN[J]. 中国物理快报, 2002, 19(10): 1513-1515.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I10/1513
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2002, Vol. 19 
