Photovoltaic Effect of ZnO/Si Heterostructure
FU Zhu-xi1,2 , LIN Bi-xia2 , LIAO Gui-hong2
1 Structure Research Laboratory,
2 Department of Physics, University of Science and Technology of China, Hefei 230026
Photovoltaic Effect of ZnO/Si Heterostructure
FU Zhu-xi1,2 ;LIN Bi-xia2 ;LIAO Gui-hong2
1 Structure Research Laboratory,
2 Department of Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
72.40.+w ,
73.40.Lq ,
73.50.Pz
Abstract ： A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is investigated. The current-voltage characteristics under dark or illumination were determined. It is indicated that the sample is likely a semiconductor junction, and this structure generates an obvious photovoltaic effect. Spectral responses of photovoltage, cathodotoluminescence and excitation spectra at room temperature were employed to study the structural properties and the mechanism generating photovoltaic effect of the samples. The energy level and the process of electron transition in the ZnO film have also been deduced.
Key words ：
72.40.+w
73.40.Lq
73.50.Pz
出版日期: 1999-10-01
:
72.40.+w
(Photoconduction and photovoltaic effects)
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
73.50.Pz
(Photoconduction and photovoltaic effects)
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1999, Vol. 16 
