XU Peng-Shou1,2, SUN Yu-Ming2, SHI Chao-Shu2, XU Fa-Qiang2, PAN Hai-Bin2
1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
Abstract： The native point defect states in ZnO have been calculated by using a full-potential linear Muffin-tin orbital method. The results show that Zn vacancy and O interstitial produce the shallow acceptor levels above the valence band. The O vacancy produces a deep donor level, while Zn interstitial produces a shallow donor level, both below the conduction band. The Zn interstitial is the main factor to induce the native n-type conductivity in ZnO.
XU Peng-Shou;SUN Yu-Ming;SHI Chao-Shu;XU Fa-Qiang;PAN Hai-Bin. Native Point Defect States in ZnO
[J]. 中国物理快报, 2001, 18(9): 1252-1253.
XU Peng-Shou, SUN Yu-Ming, SHI Chao-Shu, XU Fa-Qiang, PAN Hai-Bin. Native Point Defect States in ZnO
. Chin. Phys. Lett., 2001, 18(9): 1252-1253.
2001, Vol. 18 
