Interface Electronic Structure of Ge/ZnSe( 111)
ZHANG Hai-feng1,2 , WANG Chong-yu1 , FANG Rong-chuan2 , BAN Da-yan2 , LI Yong-ping2
1 Central Iron and Steel Research Institute, Beijing 100081
2 Department of Physics, University of Science and Technology of China, Hefei 230026
Interface Electronic Structure of Ge/ZnSe( 111)
ZHANG Hai-feng1,2 ;WANG Chong-yu1 ;FANG Rong-chuan2 ;BAN Da-yan2 ;LI Yong-ping2
1 Central Iron and Steel Research Institute, Beijing 100081
2 Department of Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
73.40.Lq ,
71.25.Tn
Abstract ： Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. The interface electronic structure and the interaction characteristics between interface atoms are analyzed. The results show a significant effect of the interface atomic arrangement on the electronic structures.
Key words ：
73.40.Lq
71.25.Tn
出版日期: 1997-02-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
71.25.Tn
引用本文:
ZHANG Hai-feng;WANG Chong-yu;FANG Rong-chuan;BAN Da-yan;LI Yong-ping. Interface Electronic Structure of Ge/ZnSe( 111)[J]. 中国物理快报, 1997, 14(2): 128-130.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I2/128
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