Vertical Transport in GaAs/AlAs Superlattice with Weak Coupling Between Wells
HE Li-xiong, SUN Bao-quan, WU Jian-qing
National Laboratory for Semiconductor Superlattice and Microstructures, Beijing 100083,
and Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002(mailing address)
Vertical Transport in GaAs/AlAs Superlattice with Weak Coupling Between Wells
HE Li-xiong;SUN Bao-quan;WU Jian-qing
National Laboratory for Semiconductor Superlattice and Microstructures, Beijing 100083,
and Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002(mailing address)
Abstract： Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic method. Spontaneous current oscillations are also investigated. The domain formation time 70 ± 30 ns is directly measured. By using discrete-tunneling model, the key parameters of the relation between tunneling current and the bias between adjacent wells were quantitatively determined from the experimental data.
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
HE Li-xiong;SUN Bao-quan;WU Jian-qing. Vertical Transport in GaAs/AlAs Superlattice with Weak Coupling Between Wells[J]. 中国物理快报, 1998, 15(4): 293-295.
HE Li-xiong, SUN Bao-quan, WU Jian-qing. Vertical Transport in GaAs/AlAs Superlattice with Weak Coupling Between Wells. Chin. Phys. Lett., 1998, 15(4): 293-295.
1998, Vol. 15 
