摘要InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2ML/8ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800μm2 without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25μ,m at 300K, the peak detectivities of the detectors are 4×109cm・Hz1/2/W at 77K and 2×108cm・Hz1/2/W at 300K, respectively
Abstract：InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2ML/8ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800μm2 without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25μ,m at 300K, the peak detectivities of the detectors are 4×109cm・Hz1/2/W at 77K and 2×108cm・Hz1/2/W at 300K, respectively
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2009, Vol. 26 
