中国物理快报  2009, Vol. 26 Issue (2): 28101-028101    DOI: 10.1088/0256-307X/26/2/028101
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate
PEI Xiao-Jiang, GUO Li-Wei, WANG Xiao-Hui, WANG Yang, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming
Beijing national Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190
Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate
PEI Xiao-Jiang, GUO Li-Wei, WANG Xiao-Hui, WANG Yang, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming
Beijing national Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190