Cation Effect on Copper Chemical Mechanical Polishing
WANG Liang-Yong1,2, LIU Bo1, SONG Zhi-Tang1, FENG Song-Lin1
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049
Cation Effect on Copper Chemical Mechanical Polishing
WANG Liang-Yong1,2, LIU Bo1, SONG Zhi-Tang1, FENG Song-Lin1
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049
摘要We examine the effect of cations in solutions containing benzotriazole (BTA) and H2O2 on copper chemical mechanical polishing (CMP). On the base of atomic force microscopy (AFM) and material removal rate (MRR) results, it is found that ammonia shows the highest MRR as well as good surface after CMP, while KOH demonstrates the worst performance. These results reveal a mechanism that small molecules with lone-pairs rather than molecules with steric effect and common inorganic cations are better for copper CMP process, which is indirectly confirmed by open circuit potential (OCP).
Abstract：We examine the effect of cations in solutions containing benzotriazole (BTA) and H2O2 on copper chemical mechanical polishing (CMP). On the base of atomic force microscopy (AFM) and material removal rate (MRR) results, it is found that ammonia shows the highest MRR as well as good surface after CMP, while KOH demonstrates the worst performance. These results reveal a mechanism that small molecules with lone-pairs rather than molecules with steric effect and common inorganic cations are better for copper CMP process, which is indirectly confirmed by open circuit potential (OCP).
WANG Liang-Yong;LIU Bo;SONG Zhi-Tang;FENG Song-Lin. Cation Effect on Copper Chemical Mechanical Polishing[J]. 中国物理快报, 2009, 26(2): 28103-028103.
WANG Liang-Yong, LIU Bo, SONG Zhi-Tang, FENG Song-Lin. Cation Effect on Copper Chemical Mechanical Polishing. Chin. Phys. Lett., 2009, 26(2): 28103-028103.
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