InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
WANG Hui1, ZHU Ji-Hong1, JIANG De-Sheng1, ZHU Jian-Jun1, ZHAO De-Gang1, LIU Zong-Shun1, ZHANG Shu-Ming1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
WANG Hui1, ZHU Ji-Hong1, JIANG De-Sheng1, ZHU Jian-Jun1, ZHAO De-Gang1, LIU Zong-Shun1, ZHANG Shu-Ming1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
摘要Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600-850°C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750°C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400nm.
Abstract：Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600-850°C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750°C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400nm.
[1] Wu J, Walukiewicz W, Yu K M, Ager III J W, Lu H, Schaff WJ, Saiko Y and Nanishi Y 2002 Appl. Phys. Lett. 80 3967 [2] Davydov V Y et al 2002 Phys. Status Solidi B 234 787 [3] Wu J, Walukiewicz W, Yu K M, Shan W, Ager J W III, HallerE E, Lu H, Schaff W J, Metzger W K and Kurtz S 2003 J. Appl.Phys. 94 6477 [4] Bernardini F and Fiorentini V 2001 Phys. Rev. B 64 085207 [5] Singh R, Doppalapudi D, Moustakas T D and Romano L T 1997 Appl. Phys. Lett. 70 1089 [6] Kim I, Park H, Park Y and Kim T 1998 Appl. Phys.Lett. 73 1634 [7] Jani O, Ferguson I, Honsberg C and Kurtz S 2007 Appl.Phys. Lett. 91 132117 [8] Neufeld C J, Toledo N G, Cruz S C, Iza M, DenBaars S P andMishra U K 2008 Appl. Phys. Lett. 93 143502 [9] Reed M J, EI-Masry N A, Parker C A, Roberts J C and BedairS M 2000 Appl. Phys. Lett. 77 4121 [10] Pearton S J, Lee J W and Yuan C 1996 Appl. Phys.Lett. 68 2690 [11] Nakamura S, Mukai T, Senoh M and Iwasa N 1992 Jpn.J. Appl. Phys. 31 L139 [12] Kumakura K, Makimoto T and Kobayashi N 2000 Jpn. J.Appl. Phys. Part 2 39 L337 [13] Kumakura K, Makimoto T and Kobayashi N 2003 J.Appl. Phys. 93 3370 [14] Wang M J, Shen B, Xu F J, Wang Y, Xu J, Huang S, Yang ZJ, Qin Z X and Zhang G Y 2007 Chin. Phys. Lett. 24 1682
2009, Vol. 26 
