AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template
SANG Li-Wen1, QIN Zhi-Xin1, FANG Hao1, ZHANG Yan-Zhao1, LI Tao1, XU Zheng-Yu1, YANG Zhi-Jian1, SHEN Bo1, ZHANG Guo-Yi1, LI Shu-Ping2, YANG Wei-Huang2, CHEN Hang-Yang2, LIU Da-Yi2, KANG Jun-Yong2
1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 1008712Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen, 361005
AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template
SANG Li-Wen1, QIN Zhi-Xin1, FANG Hao1, ZHANG Yan-Zhao1, LI Tao1, XU Zheng-Yu1, YANG Zhi-Jian1, SHEN Bo1, ZHANG Guo-Yi1, LI Shu-Ping2, YANG Wei-Huang2, CHEN Hang-Yang2, LIU Da-Yi2, KANG Jun-Yong2
1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 1008712Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen, 361005
摘要We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
Abstract：We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
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2009, Vol. 26 
