Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
JI Lian1, ZHANG Shu-Ming1, JIANG De-Sheng1, LIU Zong-Shun1, ZHANG Li-Qun1, ZHU Jian-Jun1, ZHAO De-Gang1, DUAN Li-Hong1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
JI Lian1, ZHANG Shu-Ming1, JIANG De-Sheng1, LIU Zong-Shun1, ZHANG Li-Qun1, ZHU Jian-Jun1, ZHAO De-Gang1, DUAN Li-Hong1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
摘要InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-μm-long cavity is formed by cleaving the substrate along the orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8° and 32°, respectively.
Abstract：InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-μm-long cavity is formed by cleaving the substrate along the orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8° and 32°, respectively.
JI Lian;ZHANG Shu-Ming;JIANG De-Sheng;LIU Zong-Shun;ZHANG Li-Qun;ZHU Jian-Jun;ZHAO De-Gang;DUAN Li-Hong;YANG Hui;. Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure[J]. 中国物理快报, 2010, 27(5): 54204-054204.
JI Lian, ZHANG Shu-Ming, JIANG De-Sheng, LIU Zong-Shun, ZHANG Li-Qun, ZHU Jian-Jun, ZHAO De-Gang, DUAN Li-Hong, YANG Hui,. Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure. Chin. Phys. Lett., 2010, 27(5): 54204-054204.
[1] Nakamura S et al 1996 Jpn. J. Appl. Phys. 35 74 [2] Nakamura S et al 1996 Appl. Phys. Lett. 69 4056 [3] Nakamura S et al 1998 J. Cryst. Growth 189/190 820 [4] Nagahama S I et al 2000 Jpn. J. Appl. Phys. Ⅱ 39 L647 [5] Miyoshi T et al 2008 Proc. SPIE 6894 689414 [6] Goto S, TojyoT, Ansai S, Yabuki Y et al 2001 28th Int. Symp. Compound Semiconduct. 177 [7] Goto S et al 2003 Phys. Status Solidi A 200 122 [8] Swietlik T et al 2007 J. Appl. Phys. 101 083109 [9] Holc K et al 2009 Proc. SPIE 7216 721618 [10] Kehl Sink R 2000 Ph.D. Dissertation of University of California (Santa Barbara) [11] Li D Y et al 2006 J. Appl. Phys. 100 046101 [12] Dennemarck J et al 2007 Phys. Status Solidi C 4 78
2010, Vol. 27 
orientation using laser scriber. The threshold current and voltage of the
orientation using laser scriber. The threshold current and voltage of the