2010, Vol. 27(5): 54204-054204    DOI: 10.1088/0256-307X/27/5/054204
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
JI Lian1, ZHANG Shu-Ming1, JIANG De-Sheng1, LIU Zong-Shun1, ZHANG Li-Qun1, ZHU Jian-Jun1, ZHAO De-Gang1, DUAN Li-Hong1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
收稿日期 2009-10-20  修回日期 1900-01-01
Supporting info
[1] Nakamura S et al 1996 Jpn. J. Appl. Phys. 35 74
[2] Nakamura S et al 1996 Appl. Phys. Lett. 69 4056
[3] Nakamura S et al 1998 J. Cryst. Growth 189/190 820
[4] Nagahama S I et al 2000 Jpn. J. Appl. Phys. Ⅱ 39 L647
[5] Miyoshi T et al 2008 Proc. SPIE 6894 689414
[6] Goto S, TojyoT, Ansai S, Yabuki Y et al 2001 28th Int. Symp. Compound Semiconduct. 177
[7] Goto S et al 2003 Phys. Status Solidi A 200 122
[8] Swietlik T et al 2007 J. Appl. Phys. 101 083109
[9] Holc K et al 2009 Proc. SPIE 7216 721618
[10] Kehl Sink R 2000 Ph.D. Dissertation of University of California (Santa Barbara)
[11] Li D Y et al 2006 J. Appl. Phys. 100 046101
[12] Dennemarck J et al 2007 Phys. Status Solidi C 4 78