Resonant Raman Scattering in GaAs1-x Px :N
YU Rong-wen, ZHENG Jian-sheng, XIAO Mei-jie, LIN Zhi-rong, YAN Bing-zhang
Department of Physics, Xiamen University, Xiamen 361005
Resonant Raman Scattering in GaAs1-x Px :N
YU Rong-wen;ZHENG Jian-sheng;XIAO Mei-jie;LIN Zhi-rong;YAN Bing-zhang
Department of Physics, Xiamen University, Xiamen 361005
关键词 ：
78.30.Fs ,
71.55.Eq ,
71.35.+z
Abstract ： We report a study of the resonant Raman scattering (RRS) by optical phonons that is induced by excitons bound to isoelectronic nitrogen impurities in GaAs1-x Px :N alloys. Under resonant excitation into Nx band, strong Raman lines involving allowed LO and “forbidden” TO for backscattering configuration from (100) surface are observed. This is interpreted as the breakdown of normal selection rule in the RRS process. By following the temperature dependence of the Nx luminescence and its phonon sidebands, we also separate RRS from sharp line due to luminescence.
Key words ：
78.30.Fs
71.55.Eq
71.35.+z
出版日期: 1996-01-01
引用本文:
YU Rong-wen;ZHENG Jian-sheng;XIAO Mei-jie;LIN Zhi-rong;YAN Bing-zhang. Resonant Raman Scattering in GaAs1-x Px :N[J]. 中国物理快报, 1996, 13(1): 54-57.
1-x Px :N. Chin. Phys. Lett., 1996, 13(1): 54-57.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I1/54
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1996, Vol. 13 
