Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates
LI Xian-Jie1,2, YAN Fa-Wang1,2, ZHANG Wen-Jun1, ZHANG Rong-Gui1, LIU Wei-Ji1, AO Jin-Ping1,3, ZENG Qing-Ming1, LIU Shi-Yong2, LIANG Chun-Guang1
1Hebei Semiconductor Research Institute, Shijiazhuang 050051
2Department of Electronic Engineering, Jilin University, Changchun 130023
3Department of Electrical and Electronic Engineering, Tokushima University, Tokushima 770-8506, Japan
Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates
LI Xian-Jie1,2;YAN Fa-Wang1,2;ZHANG Wen-Jun1;ZHANG Rong-Gui1;LIU Wei-Ji1;AO Jin-Ping1,3;ZENG Qing-Ming1;LIU Shi-Yong2;LIANG Chun-Guang1
1Hebei Semiconductor Research Institute, Shijiazhuang 050051
2Department of Electronic Engineering, Jilin University, Changchun 130023
3Department of Electrical and Electronic Engineering, Tokushima University, Tokushima 770-8506, Japan
Abstract： A functional field effect transistor with self-organized In0.15Ga0.85As/GaAs quantum wires (QWRs) as a channel was achieved by molecular beam epitaxy on a (553)B GaAs substrate. Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure. The device with a gate-length of 2 μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature. The saturated drain current is as high as 5.6 mA. The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer. In addition, the effective gate width was discussed in comparison with the geometric gate width of the device, from which a larger maximum transconductance of 130 mS/mm could be estimated.
LI Xian-Jie;YAN Fa-Wang;ZHANG Wen-Jun;ZHANG Rong-Gui;LIU Wei-Ji;AO Jin-Ping;ZENG Qing-Ming;LIU Shi-Yong;LIANG Chun-Guang. Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates[J]. 中国物理快报, 2001, 18(8): 1147-1149.
LI Xian-Jie, YAN Fa-Wang, ZHANG Wen-Jun, ZHANG Rong-Gui, LIU Wei-Ji, AO Jin-Ping, ZENG Qing-Ming, LIU Shi-Yong, LIANG Chun-Guang. Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates. Chin. Phys. Lett., 2001, 18(8): 1147-1149.
2001, Vol. 18 
