Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy
MEI Zeng-Xia, DU Xiao-Long, ZENG Zhao-Quan, GUO Yang, WANG Jian, JIA Jin-Feng, XUE Qi-Kun
State Key Laboratory for Surface Science, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy
MEI Zeng-Xia;DU Xiao-Long;ZENG Zhao-Quan;GUO Yang;WANG Jian;JIA Jin-Feng;XUE Qi-Kun
State Key Laboratory for Surface Science, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
81.15.Hi ,
68.55.-a
Abstract ： We report on the growth of rock salt MgO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy. A two-step method, i.e., high temperature epilayer growth after low-temperature buffer layer growth, was adopted to obtain the single crystal MgO film. The epitaxial orientationship between the MgO epilayer and the sapphire (0001) substrate was studied by using in-situ reflection high energy electron diffraction and ex-situ x-ray diffraction, and it is found that the MgO film grows with [111] orientation. The role of the low temperature buffer layer in the improvement of crystal quality of the MgO epilayer is discussed based on the cross-sectional scanning electron microscopy.
Key words ：
81.15.Hi
68.55.-a
出版日期: 2004-02-01
:
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
68.55.-a
(Thin film structure and morphology)
引用本文:
MEI Zeng-Xia;DU Xiao-Long;ZENG Zhao-Quan;GUO Yang;WANG Jian;JIA Jin-Feng;XUE Qi-Kun. Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. 中国物理快报, 2004, 21(2): 410-413.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I2/410
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2004, Vol. 21 
