MBE Growth of Highly Relaxed Si0.45 Ge0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates
LU Xiang-Dang1 , ZHANG Xiang-Jiu1 , YANG Hong-Bin1 , FAN Yong-Liang1 , HUANG Wei-Ning2 , SUN Yan-Qing3
1 Surface Physics Laboratory, Fudan University, Shanghai 200433
2 Department of Microelectronics, Fudan University, Shanghai 200433
3 Department of Physics, Fudan University, Shanghai 200433
MBE Growth of Highly Relaxed Si0.45 Ge0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates
LU Xiang-Dang1 ;ZHANG Xiang-Jiu1 ;YANG Hong-Bin1 ;FAN Yong-Liang1 ;HUANG Wei-Ning2 ;SUN Yan-Qing3
1 Surface Physics Laboratory, Fudan University, Shanghai 200433
2 Department of Microelectronics, Fudan University, Shanghai 200433
3 Department of Physics, Fudan University, Shanghai 200433
关键词 ：
81.15.Hi ,
61.72.Ff ,
78.30.Er
Abstract ： We investigate the molecular-beam-epitaxy growth of highly relaxed Si0.45 Ge0.55 films with very low dislocation densities. By using the Si3 N4 film as the mask material, the Si0.45 Ge0.55 film can be grown on a compositionally stepwise graded SiGe buffer layer in 3μm×3μm windows on a Si (001) substrate. Raman scattering spectroscopy measurement shows that more than 90% strain of the Si0.45 Ge0.55 film is relaxed, and almost neither misfit dislocation lines nor etch pits of thread dislocations could be observed when the sample is etched by the modified Schimmel etchant. We suggest that the results can be explained by influence of the edge-induced strain relaxation of the epitaxial film and the edge-induced stress of the mask material.
Key words ：
81.15.Hi
61.72.Ff
78.30.Er
出版日期: 2006-01-01
:
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
61.72.Ff
(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
78.30.Er
(Solid metals and alloys ?)
引用本文:
LU Xiang-Dang;ZHANG Xiang-Jiu;YANG Hong-Bin;FAN Yong-Liang;HUANG Wei-Ning;SUN Yan-Qing. MBE Growth of Highly Relaxed Si0.45 Ge0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates[J]. 中国物理快报, 2006, 23(1): 220-222.
0.45 Ge0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates. Chin. Phys. Lett., 2006, 23(1): 220-222.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I1/220
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