Induced Nucleation of Diamond Films on ZnS Substrates Precoated with Ceramic Interlayer
GAO Xu-Hui1 , LU Fan-Xiu1 , TONG Yu-Mei1 , GUO Hui-Bin1 , TANG Wei-Zhong1 , LI Cheng-Ming1 , CHEN Guang-Chao1 , YU Huai-Zhi2 , CHENG Hong-Fan2 , YANG Hai2
1 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
2 General Research Institute for Nonferrous Metals, Beijing 100088
Induced Nucleation of Diamond Films on ZnS Substrates Precoated with Ceramic Interlayer
GAO Xu-Hui1 ;LU Fan-Xiu1 ;TONG Yu-Mei1 ;GUO Hui-Bin1 ;TANG Wei-Zhong1 ;LI Cheng-Ming1 ;CHEN Guang-Chao1 ;YU Huai-Zhi2 ;CHENG Hong-Fan2 ;YANG Hai2
1 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
2 General Research Institute for Nonferrous Metals, Beijing 100088
关键词 ：
81.15.Gh ,
68.55.-a ,
78.20.-e
Abstract ： We attempt to coat a multi-spectrum chemical-vapor-deposition ZnS substrate with smooth crystalline diamond films on the top of properly designed ceramic interlayer, which provides protection for ZnS against corrosion by the H2 -CH4 microwave plasma and mitigates the thermal expansion coefficient mismatching between diamond and ZnS. However, difficulties in the homogenous diamond nucleation on a ceramic interlayer were encountered. It was found that high rate nucleation of diamond could be induced by a metal or semiconductor mask placed on the top of ZnS.
Key words ：
81.15.Gh
68.55.-a
78.20.-e
出版日期: 2004-02-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.-a
(Thin film structure and morphology)
78.20.-e
(Optical properties of bulk materials and thin films)
引用本文:
GAO Xu-Hui;LU Fan-Xiu;TONG Yu-Mei;GUO Hui-Bin;TANG Wei-Zhong;LI Cheng-Ming;CHEN Guang-Chao;YU Huai-Zhi;CHENG Hong-Fan;YANG Hai. Induced Nucleation of Diamond Films on ZnS Substrates Precoated with Ceramic Interlayer[J]. 中国物理快报, 2004, 21(2): 406-409.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I2/406
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2004, Vol. 21 
