Growth and Characterization of GaAs/AlGaAs Thue--Morse Quasicrystal Photonic Bandgap Structures
ZHANG Yong-Gang, JIANG Xun-Ya, ZHU Cheng, GU Yi, LI Ai-Zhen, QI Ming, FENG Song-Lin
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Growth and Characterization of GaAs/AlGaAs Thue--Morse Quasicrystal Photonic Bandgap Structures
ZHANG Yong-Gang;JIANG Xun-Ya;ZHU Cheng;GU Yi;LI Ai-Zhen;QI Ming;FENG Song-Lin
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
61.44.Br ,
78.67.Pt ,
81.15.Hi
Abstract ： One-dimensional quasicrystal structures composed of III-V semiconductor GaAs/AlGaAs multilayers in deterministic Thue--Morse (TM) sequences have been grown by using gas-source molecular beam epitaxy to investigate both the structural and the photonic bandgap properties. The x-ray measurements show that this aperiodic system exhibits obvious periodic spatial correlations, from which the precise thickness of the constitutive layers could be determined. Transmission and reflection measurements experimentally demonstrated plenty of photonic bandgaps with traditional or fractal features existing in those quasicrystal structures, which are in good agreement with the transfer matrix simulations. The diversity of this TM system makes it a good candidate for photonic device applications.
Key words ：
61.44.Br
78.67.Pt
81.15.Hi
出版日期: 2005-05-01
:
61.44.Br
(Quasicrystals)
78.67.Pt
(Multilayers; superlattices; photonic structures; metamaterials)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
ZHANG Yong-Gang;JIANG Xun-Ya;ZHU Cheng;GU Yi;LI Ai-Zhen;QI Ming;FENG Song-Lin. Growth and Characterization of GaAs/AlGaAs Thue--Morse Quasicrystal Photonic Bandgap Structures[J]. 中国物理快报, 2005, 22(5): 1191-1194.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I5/1191
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2005, Vol. 22 
