High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers
LU Xiu-Zhen, LIU Feng-Qi, LIU Jun-Qi, JIN Peng, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers
LU Xiu-Zhen;LIU Feng-Qi;LIU Jun-Qi;JIN Peng;WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
42.55.Px ,
81.15.Hi ,
78.66.Fd
Abstract ： We develop 5.5-μm Inx Ga1-x As/Iny Al1-y As strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323K (50°C) for uncoated 20-μm-wide and 2-mm-long devices. These devices display an output power of 36mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10mW per facet has been measured at 83K.
Key words ：
42.55.Px
81.15.Hi
78.66.Fd
出版日期: 2005-12-01
:
42.55.Px
(Semiconductor lasers; laser diodes)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
78.66.Fd
(III-V semiconductors)
引用本文:
LU Xiu-Zhen;LIU Feng-Qi;LIU Jun-Qi;JIN Peng;WANG Zhan-Guo. High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers[J]. 中国物理快报, 2005, 22(12): 3077-3079.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I12/3077
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2005, Vol. 22 
