Preparation of AlN Films by Ion-Beam-Enhanced Deposition
MEN Chuan-Ling1,2, XU Zheng1, ZHENG Zhi-Hong2, DUO Xin-Zhong2, ZHANG Miao2, LIN Cheng-Lu2
1Institute of Microelectronic Materials, School of Material Science and Engineering, Tongji University, Shanghai 200092
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Preparation of AlN Films by Ion-Beam-Enhanced Deposition
MEN Chuan-Ling1,2;XU Zheng1;ZHENG Zhi-Hong2;DUO Xin-Zhong2;ZHANG Miao2;LIN Cheng-Lu2
1Institute of Microelectronic Materials, School of Material Science and Engineering, Tongji University, Shanghai 200092
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Abstract： Aluminum nitride (AlN) films have been synthesized on Si(100)
substrates by ion-beam-enhanced deposition. Spreading resistance profile results suggest that the spreading resistance decreases with increasing rates of Al evaporation. If the evaporation rate of Al is higher than 2.5Å/s, the quality of AlN film will greatly deteriorate. The spreading resistance of the best quality film deposited at 0.5Å/s rate of Al was larger than 108Ω. X-ray photoelectron spectroscopy measurements indicate the formation of AlN films at 0.5 and 1.0Å/s evaporation rate of Al. With the increasing evaporation rate of Al, the ratio of N to Al is decreased. When deposited at 0.5 and 1.0Å/s evaporation rates of Al, the ratio of N to Al was 0.402:1 and 0.250:1, respectively. Atomic force microscopy observation also exhibits that the surface of the AlN film formed at 0.5Å/s rate is smoother and more uniform than that formed at 1.0Å/s.
MEN Chuan-Ling;XU Zheng;ZHENG Zhi-Hong;DUO Xin-Zhong;ZHANG Miao;LIN Cheng-Lu. Preparation of AlN Films by Ion-Beam-Enhanced Deposition[J]. 中国物理快报, 2001, 18(9): 1282-1284.
MEN Chuan-Ling, XU Zheng, ZHENG Zhi-Hong, DUO Xin-Zhong, ZHANG Miao, LIN Cheng-Lu. Preparation of AlN Films by Ion-Beam-Enhanced Deposition. Chin. Phys. Lett., 2001, 18(9): 1282-1284.
2001, Vol. 18 
