Electrical Characteristics and Microstructures of Sm2O3-Doped Bi4Ti3O12 Ceramics
CHEN Min1,3, WANG Yu1,2, LIU Zu-Li2, DONG Liang1, YANG Xin-Sheng1, YAO Kai-Lun1,2
1Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074
2National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008
3Department of Physics, Hunan Institute of Science and Technology, Yueyang 414000
Electrical Characteristics and Microstructures of Sm2O3-Doped Bi4Ti3O12 Ceramics
1Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074
2National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008
3Department of Physics, Hunan Institute of Science and Technology, Yueyang 414000
Abstract： We investigate the electrical properties of Sm-doped Bi4-xSmxTi3O12 (BST) ceramics prepared by a conventional electroceramic technique. The x-ray diffraction analysis reveals the Bi-layered perovskite structure in all samples. The SEM micrographs show randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0, the current--voltage characteristics exhibit negative differential resistance behaviour and the P--V hysteresis loops are characterized by large leakage current, whereas for the samples with x=0.6 and 0.8, the current--voltage characteristics show simple ohmic behaviour and the P--V hysteresis loops are of the saturated and undistorted hysteresis. The remanent polarization and coercive field of the BST ceramic with x=0.8 are above 32μC/cm2 and 70kV/cm, respectively.
2004, Vol. 21 
