中国物理快报  2010, Vol. 27 Issue (7): 78502-078502    DOI: 10.1088/0256-307X/27/7/078502
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr 0.6TiO3 Dielectric

WANG Li-Ping, LU Ai-Xia, DOU Wei, WAN Qing

1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 2Ningbo Institute of Material Technology and Engineering. Chinese Academy of Sciences, Ningbo 315201
Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr 0.6TiO3 Dielectric

WANG Li-Ping, LU Ai-Xia, DOU Wei, WAN Qing

1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 2Ningbo Institute of Material Technology and Engineering. Chinese Academy of Sciences, Ningbo 315201