Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation
HE Jun1,2, LI Ming1,2, D. H. Kim2, J. C. Lee2, D. J. Lee2, FU De-Jun1, T. W. Kang2
1Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 2Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, 3-26 Seoul 100-715, Korea
Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation
HE Jun1,2, LI Ming1,2, D. H. Kim2, J. C. Lee2, D. J. Lee2, FU De-Jun1, T. W. Kang2
1Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 2Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, 3-26 Seoul 100-715, Korea
摘要Polycrystalline CdMnS and CdMnS:Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS:Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS:Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77k
Abstract：Polycrystalline CdMnS and CdMnS:Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS:Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS:Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77k
(Semiconductor-device characterization, design, and modeling)
引用本文:
HE Jun;LI Ming;D. H. Kim;J. C. Lee;D. J. Lee;FU De-Jun;T. W. Kang. Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation[J]. 中国物理快报, 2010, 27(7): 78501-078501.
HE Jun, LI Ming, D. H. Kim, J. C. Lee, D. J. Lee, FU De-Jun, T. W. Kang. Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation. Chin. Phys. Lett., 2010, 27(7): 78501-078501.
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2010, Vol. 27 
