|
|
2010, Vol. 27(7): 78502-078502 DOI: 10.1088/0256-307X/27/7/078502 |
|
|
|
Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr 0.6TiO3 Dielectric |
|
|
WANG Li-Ping, LU Ai-Xia, DOU Wei, WAN Qing |
|
|
1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 2Ningbo Institute of Material Technology and Engineering. Chinese Academy of Sciences, Ningbo 315201 |
|
|
收稿日期 2010-02-24 修回日期 1900-01-01 |
|
|
Supporting info |
|
|
|
|
|
|
[1] Kim J B et al 2009 Appl. Phys. Lett. 94 142107 [2] Kim K D and Song C K 2006 Appl. Phys. Lett. 88 233508 [3] Hu S G 2009 Chin. Phys. Lett. 26 017304 [4] Kim I D, Choi Y Wand Tuller H L 2005 Appl. Phys. Lett. 87 043509 [5] Lee K et al 2006 Appl. Phys. Lett. 89 133507 [6] Kim J B, Fuentes-Hernnandez C and Kippelen B 2008 Appl. Phys. Lett. 93 242111 [7] Su N C, Wang J S and Chin A 2009 IEEE Electron. Device Lett. 30 1317 [8] Wang G et al 2004 J. Appl. Phys. 95 316 [9] Yu A F et al 2009 Chin. Phys. Lett. 26 078501 [10] Kang K T et al 2005 Appl. Phys. Lett. 87 242908 [11] Lee J H et al 2006 Electrochem. Solid-State Lett. 9 G292 [12] Cosseddu P et al 2009 Adv. Mater. 21 344 [13] Lee C A et al 2006 Solid-State Electron. 50 1216 [14] Huang C, West J E and Katz H E 2006 Adv. Funct. Mater. 17 142 [15] Lu A X et al 2009 Appl. Phys. Lett. 95 222905 [16] Son Y D et al 2006 IEEE Trans. Electron. Devices 53 1260 [17] Zhang L et al 2009 Appl. Phys. Lett. 95 072112
|
|
|