摘要Highly oriented aluminium nitride (AlN) films are grown on p-Si (100) substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ=33.15°corresponding to AlN h<100> crystalline orientation. The influences of substrate temperature and ambient nitrogen (N2) pressure on the crystallinity of AlN films are remarkable. At room temperature, when the ambient N2 pressure arises from 5×10-6 Pa to 5Pa, the crystallinity of the film becomes better. When the substrate temperature is 600°C, the film has the best crystallinity at 0.05Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of Al-N bonds and surface morphology of AlN films are also studied.
Abstract：Highly oriented aluminium nitride (AlN) films are grown on p-Si (100) substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ=33.15°corresponding to AlN h<100> crystalline orientation. The influences of substrate temperature and ambient nitrogen (N2) pressure on the crystallinity of AlN films are remarkable. At room temperature, when the ambient N2 pressure arises from 5×10-6 Pa to 5Pa, the crystallinity of the film becomes better. When the substrate temperature is 600°C, the film has the best crystallinity at 0.05Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of Al-N bonds and surface morphology of AlN films are also studied.
LV Lei;LI Qing-Shan;LI Li;ZHANG Li-Chun; WANG Cai-Feng;QI Hong-Xia. Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition[J]. 中国物理快报, 2007, 24(2): 552-554.
LV Lei, LI Qing-Shan, LI Li, ZHANG Li-Chun, WANG Cai-Feng, QI Hong-Xia. Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition. Chin. Phys. Lett., 2007, 24(2): 552-554.
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