摘要We perform 9MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm -2. The captured colour images become very blurry at 4×1010 cm-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.
Abstract：We perform 9MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm -2. The captured colour images become very blurry at 4×1010 cm-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.
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2007, Vol. 24 
