Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam
WANG Hai-Yun1, WENG Hui-Min1, HANG De-Sheng2, ZHOU Xian-Yi1, YE Bang-Jiao1, FAN Yang-Mei1, HAN Rong-Dian1, C. C. Ling3, Y. P. Hui3
1Department of Modern Physics, University of Science and Technology of China, Hefei 230027
2Department of Physics, Nanjing University, Nanjing 210093
3Department of Physics, The University of Hong Kong, Hong Kong
Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam
WANG Hai-Yun1;WENG Hui-Min1;HANG De-Sheng2;ZHOU Xian-Yi1;YE Bang-Jiao1;FAN Yang-Mei1;HAN Rong-Dian1;C. C. Ling3;Y. P. Hui3
1Department of Modern Physics, University of Science and Technology of China, Hefei 230027
2Department of Physics, Nanjing University, Nanjing 210093
3Department of Physics, The University of Hong Kong, Hong Kong
Abstract： The defect changes in 6H-SiC after annealing and 10 MeV electron irradiation have been studied by using a variable-energy positron beam. It was found that after annealing, the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials. When the sample was annealed at 1400 °C for 30 min in vacuum, a 20-nm thickness Si layer was found on the top of the SiC substrate, this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages. After 10 MeV electron irradiation, for n-type 6H-SiC, the S parameter increased from 0.4739 to 0.4822, and the relative positron-trapping rate was about 27.878 times of the origin sample, this shows that there are some defects created in n-type 6H-SiC. For p-type 6H-SiC, it is very unclear, this may be because of the opposite charge of vacancy defects.
(Interactions of particles and radiation with matter)
引用本文:
WANG Hai-Yun;WENG Hui-Min;HANG De-Sheng;ZHOU Xian-Yi;YE Bang-Jiao;FAN Yang-Mei;HAN Rong-Dian;C. C. Ling;Y. P. Hui. Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam[J]. 中国物理快报, 2003, 20(7): 1105-1108.
WANG Hai-Yun, WENG Hui-Min, HANG De-Sheng, ZHOU Xian-Yi, YE Bang-Jiao, FAN Yang-Mei, HAN Rong-Dian, C. C. Ling, Y. P. Hui. Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam. Chin. Phys. Lett., 2003, 20(7): 1105-1108.
2003, Vol. 20 
