Preparation and Optical Properties of Nanocrystalline Ga0.62In0.38Sb Embedded in SiO2 Composite Films

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	LIU Fa-Min
	ZHANG Li-De

关键词 ： 81.15.Cd, 78.30.Fs, 78.40.Fy

Abstract： Nanocrystalline Ga_0.62In_0.38Sb embedded in SiO₂ matrix has been fabricated by radio frequency magnetron cosputtering. X-ray photoelectron spectroscopy strongly supports the existence of nanocrystalhe Ga_0.62In_0.38Sb embedded in SiO₂ matrix. The room-temperature Raman spectrum shows that the Raman peaks of the Ga_0.62In_0.38SbSiO₂ composite film have a larger red shift of about 95.3cm^-1 (longitudinal-optic) and 120.1 cm^-1 (transverse-optic) than those of the bulk GaSb. This can be explained by the phonon confinement and tensile stress effects. The room-temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 2.43 eV compared with that of the bulk semiconductor, suggesting the existence of quantum size effects.

Key words： 81.15.Cd 78.30.Fs 78.40.Fy

出版日期: 2000-02-01

:	81.15.Cd	(Deposition by sputtering)
	78.30.Fs	(III-V and II-VI semiconductors)
	78.40.Fy	(Semiconductors)

引用本文:

LIU Fa-Min;ZHANG Li-De. Preparation and Optical Properties of Nanocrystalline Ga_0.62In_0.38Sb Embedded in SiO₂ Composite Films [J]. 中国物理快报, 2000, 17(2): 142-144.
LIU Fa-Min, ZHANG Li-De. Preparation and Optical Properties of Nanocrystalline Ga_0.62In_0.38Sb Embedded in SiO₂ Composite Films . Chin. Phys. Lett., 2000, 17(2): 142-144.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2000/V17/I2/142